High Conductance Low Leakage Diode
MMBD1701/A / 1703/A / 1704/A / 1705/A
Discrete POWER & Signal Technologies
MMBD1701/A / 1703/A / 1704/A / 1705/A
3
CON...
Description
MMBD1701/A / 1703/A / 1704/A / 1705/A
Discrete POWER & Signal Technologies
MMBD1701/A / 1703/A / 1704/A / 1705/A
3
CONNECTION DIAGRAMS
3
1
85
2
1701
3
3
1703
1
2 NC 3
1 3
2
2
1704
1705
SOT-23
1
MMBD1701 MMBD1703 MMBD1704 MMBD1705
MARKING 85 MMBD1701A 87 MMBD1703A 88 MMBD1704A 89 MMBD1705A
85A 87A 88A 89A
1
2
1
2
High Conductance Low Leakage Diode
Sourced from Process 1T.
Absolute Maximum Ratings*
Symbol
W IV IO IF if if(surge) Tstg TJ Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current Peak Forward Surge Current Pulse width = 1.0 second Storage Temperature Range Operating Junction Temperature
TA = 25°C unless otherwise noted
Parameter
Value
20 50 150 150 250 -55 to +150 150
Units
V mA mA mA mA °C °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Symbol
PD RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient
Max
MMBD1701/A /1703/A-1705/A* 350 2.8 357
Units
mW mW/°C °C/W
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
©1997 Fairchild Semiconductor Corporation...
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