LOW NOISE AMPLIFIER GaAs MMIC
NJG1102F1
LOW NOISE AMPLIFIER GaAs MMIC
nGENERAL DESCRIPTION NJG1102F1 is a Low Noise Amplifier GaAs MMIC designed for ...
Description
NJG1102F1
LOW NOISE AMPLIFIER GaAs MMIC
nGENERAL DESCRIPTION NJG1102F1 is a Low Noise Amplifier GaAs MMIC designed for 800MHz band cellular phone handsets. This amplifier provides low current consumption and low noise figure at low supply voltage of 2.5V, low noise of 1.5dB and low current consumption of 3mA at supply voltage of 2.7V. NJG1102F1 includes internal self-bias circuit and input DC blocking capacitor with small package of MTP6-1. nFEATURES lLow voltage operation lLow current consumption lHigh small signal gain lLow noise figure lHigh Input IP3 lHigh output IP3 lPackage nPIN CONFIGURATION nPACKAGE OUTLINE
NJG1102F1
+2.7V typ. 3mA typ. 17dB typ. @f=820MHz 1.4dB typ. @f=820MHz -3dBm typ. @f=820.0+820.1MHz 14dBm typ. @f=820.0+820.1MHz MTP6-1 (Mount Size: 2.8 x 2.9 x 1.2mm)
F1 TYPE (Top View)
1
6
Pin connection
2
5
1.LNAOUT 2.NC 3.GND 4.GND 5.GND 6.LNAIN
3
4
Note:
is package orientation mark.
-1-
NJG1102F1
nABSOLUTE MAXIMUM RATINGS PARAMETER Drain Voltage Input Power Power Dissipation Operating Temperature Storage Temperature SYMBOL CONDITIONS VDD Pin VDD=2.7V PD Topr Tstg (Ta=25°C, Zs=Zl=50Ω) RATINGS UNITS 5.0 V +10 dBm 150 mW -40~+85 °C -55~+125 °C
nELECTRICAL CHARACTERISTICS PARAMETER Operating Frequency Drain Voltage Operating Current Small Signal Gain Gain Flatness Noise Figure Pout at 1dB Gain Compression point Input 3rd Order Intercept Point RFIN Port VSWR RFOUT Port VSWR (VDD=2.7V,f=820MHz,Ta=+25°C, Zs=Zl=50Ω) SYMBOL CONDITIONS MIN TYP MAX UNITS ...
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