Preliminary
Sirenza Microdevices NGA-286 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC...
Preliminary
Sirenza Microdevices NGA-286 is a high performance Gallium Arsenide Heterojunction Bipolar
Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance up to 6 Ghz. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products.
Product Description
NGA-286
DC-6000 MHz, Cascadable GaAs HBT MMIC Amplifier
See Application Note AN-059 for Alternates
OBSOLETE
Small Signal Gain vs. Frequency
25 20 15
dB
Product Features High Gain: 14.8dB at 1950Mhz Cascadable 50 ohm: 1.3:1 VSWR Operates from Single Supply Low Thermal Resistance Package Unconditionally Stable Applications PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite
Units dBm Frequency 850 M Hz 1950 M Hz 2400 M Hz 850 M Hz 1950 M Hz 2400 M Hz 850 M Hz 1950 M Hz 2400 M Hz DC - 5000 M Hz DC - 5000 M Hz 2000 M Hz Min. Ty p. 15.2 15.2 15.5 32.0 31.4 30.9 15.6 14.8 14.4 3800 1.3:1 1.3:1 3.4 4.0 45 50 120 55 Max.
10 5 0 0 1 2 3 4 5 Frequency GHz
Parameter Output Pow er at 1dB Compression
6
7
8
Sy mbol P1dB
OIP3
Output Third Order Intercept Point
dBm
G
Small Signal Gain
dB M Hz dB V mA °C/W
Bandw idth Determined by Return Loss (>10dB)
Input VSWR Output VSWR NF VD ID RTH, j-l Noise Figure Device Operating Voltage Device...
