NEZ1414-2E

DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-2E, NEZ1414-2E 2W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 Ω external circuit. To reduce thermal resistance the device has a PHS (Plated Heat Sink) structure. The device incorporates a WSi (tungsten silicide) gate structure for high reliability. FEATURES High Output Power : Po (1 dB) = +34.0 dBm typ. High Linear Gain High Efficiency : 8.5 dB typ. (NEZ1011-2E), 7.5 dB typ. (NEZ1414-2E) : 30 % typ. Input and Output Internally Matched for Optimum performance ORDERING INFORMATION Part Number NEZ1011-2E NEZ1414-2E T-78 Package Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NEZ1011-2E, NEZ1414-2E) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Operation in excess of any one of these parameters may result in permanent damage. Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Symbol VDS VGS IDS Ratings 15 –7 3.0 (NEZ1011-2E) 2.5 (NEZ1414-2E) +20 –20 15 175 –65 to +175 Unit V V A Gate Forward Current Gate Reverse Current Total Power Dissipation Channel Temperature Storage Temperature IGF IGR PT Tch Tstg mA mA W °C °C Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive device. Th...