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NES1823P-140 Dataheets PDF



Part Number NES1823P-140
Manufacturers NEC
Logo NEC
Description 140 W L / S-BAND PUSH-PULL POWER GaAs MES FET
Datasheet NES1823P-140 DatasheetNES1823P-140 Datasheet (PDF)

PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1823P-140 140 W L, S-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-140 is a 140 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS and IMT2000 base station systems. It is capable of delivering 140 W of output power (CW) with high linear gain, high efficiency and excellent distortion under the condition of 12 V operation. Its primary band is 1.8 to 2.3 GHz, however with different matchin.

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PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1823P-140 140 W L, S-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-140 is a 140 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS and IMT2000 base station systems. It is capable of delivering 140 W of output power (CW) with high linear gain, high efficiency and excellent distortion under the condition of 12 V operation. Its primary band is 1.8 to 2.3 GHz, however with different matching, 60 MHz or less of instantaneous bandwidth can be achieved anywhere from 0.8 to 2.3 GHz. The device employs 0.9 µm Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance, thermal characteristics, and reliability. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures. FEATURES • Push-pull type N-channel GaAs MES FET • VDS = 12.0 V operation • High output power: Pout = 140 W TYP. • High linear gain: GL = 11 dB TYP. • High power added efficiency: ηadd = 43 % TYP. @ VDS = 12.0 V, IDset = 6.0 A (total), f = 2.20 GHz ORDERING INFORMATION (PLAN) Part Number NES1823P-140 Package T-92 Supplying Form ESD protective envelope Remark To order evaluation samples, consult your NEC sales representative. Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P14751EJ1V0DS00 (1st edition) Date Published May 2000 NS CP(K) Printed in Japan © 2000 NES1823P-140 ABSOLUTE MAXIMUM RATINGS (Unless otherwise specified, T A = +25 °C) Operation in excess of any one of these parameters may result in permanent damage. Parameter Drain to Source Voltage Gate to Source Voltage Gate to Drain Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGSO VGDO ID IG Ptot Note Ratings 19 −7 −22 76 440 270 175 −65 to +175 Unit V V V A mA W °C °C Tch Tstg Note TC = +25 °C RECOMMENDED OPERATING CONDITIONS Parameter Drain to Source Voltage Gain Compression Channel Temperature Set Drain Current Gate Resistance Symbol VDS Gcomp Tch IDset Rg Note Test Conditions MIN. − − − TYP. − − − 6.0 − MAX. 12.0 3.0 +150 6.0 12.5 Unit V dB °C A Ω VDS = 12.0 V, RF OFF − − Note Rg is the series resistance between the gate supply and the FET gate. ELECTRICAL CHARACTERISTICS (TA = +25 °C) Parameter Saturated Drain Current Pinch-off Voltage Thermal Resistance Output Power Drain Current Power Added Efficiency Linear Gain Symbol IDSS Vp Rth Pout ID Test Conditions VDS = 2.5 V, VGS = 0 V VDS = 2.5 V, ID = 330 mA Channel to Case f = 2.20 GHz, VDS = 12.0 V, Pin = 43.5 dBm, Rg = 12.5 Ω, IDset = 6.0 A Total (RF OFF) Note1 MIN. − −4.0 − 50.5 − − 9 TYP. 76.0 −2.6 0.4 51.5 22.0 43 11 MAX. − − 0.55 − − − − Unit A V °C/W dBm A % dB ηadd GL Note2 Notes 1. IDset = 3.0 A each drain 2. Pin = 25 dBm 2 Preliminary Data Sheet P14751EJ1V0DS00 NES1823P-140 TYPICAL CHARACTERISTICS (TA = +25 °C) OUTPUT POWER, POWER ADDED EFFICIENCY vs. INPUT POWER [Power Matched] 55 50 45 IDset = 6 A (each drain) 4 A (each drain) 40 2 A (each drain) 3rd Order Intermodulation Distortion IM3 (dBc) 3RD ORDER INTERMODULATION DISTORTION vs. 2 TONES OUTPUT POWER [Distortion Matched] –10 –15 –20 –25 –30 –35 –40 –45 –50 –55 –60 20 25 30 35 40 45 50 4 A (each drain) 6 A (each drain) IDset = 2 A (each drain) IM3 VDS = 12.0 V f = 2.20/2.22 GHz (2 tones) Output Power Pout (dBm) Pout 50 40 30 6 A (each drain) 20 4 A (each drain) 2 A (each drain) 35 30 25 15 η add 20 25 30 35 40 10 0 45 Power Added Efficiency ηadd (%) VDS = 12.0 V f = 2.20 GHz (1 tone) 60 Input Power Pin (dBm) 2 tones Output Power Pout (dBm) Remark The graphs indicate nominal characteristics. Preliminary Data Sheet P14751EJ1V0DS00 3 NES1823P-140 S-PARAMETERS VDS = 12.0 V, IDset = 3.0 A each drain FREQUENCY GHz 1.000 1.050 1.100 1.150 1.200 1.250 1.300 1.350 1.400 1.450 1.500 1.550 1.600 1.650 1.700 1.750 1.800 1.850 1.900 1.950 2.000 2.050 2.100 2.150 2.200 2.250 2.300 2.350 2.400 2.450 2.500 2.550 2.600 2.650 2.700 2.750 2.800 2.850 2.900 2.950 3.000 MAG. 0.954 0.953 0.958 0.954 0.947 0.948 0.943 0.939 0.936 0.926 0.921 0.916 0.902 0.885 0.860 0.835 0.806 0.776 0.746 0.698 0.609 0.531 0.446 0.353 0.290 0.310 0.427 0.499 0.549 0.572 0.584 0.580 0.559 0.526 0.498 0.457 0.414 0.381 0.418 0.475 0.530 S11 ANG. (deg.) 168.3 167.5 166.2 165.2 164.0 163.0 161.4 159.6 158.1 155.8 153.6 151.8 149.0 146.8 142.6 139.1 136.2 132.6 129.0 125.2 119.2 115.8 113.6 117.4 131.5 150.5 156.0 150.9 144.8 138.0 130.0 121.2 106.7 95.2 81.5 66.8 47.6 24.7 3.4 −20.5 −41.0 MAG. 0.440 0.461 0.481 0.498 0.545 0.569 0.592 0.634 0.704 0.755 0.85.


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