NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER
Description
PRELIMINARY DATA SHEET
SILICON POWER TRANSISTOR
NEL2012F03-24
NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER
DESCRIPTION
The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of re...
