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NE960R2

Part Number	NE960R2
Manufacturer	NEC
Description	0.2 W X / Ku-BAND POWER GaAs MES FET
Published	May 7, 2005
Detailed Description	PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE96...
Datasheet	NE960R2 PDF File

Overview

PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R2 SERIES 0.
2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.
2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems.
It is capable of delivering 0.
2 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers etc.
The NE961R200 and the NE960R200 are available in chip form.
The NE960R200 has a via hole source grounding and PHS (Plated Heat Sink) for superior RF performance.
The NE960R275 is available in a hermetically sealed ceramic package.
Reliability and ...

Similar Datasheet

NE960R2 0.2 W X / Ku-BAND POWER GaAs MES FET - NEC
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NE960R5 0.5 W X / Ku-BAND POWER GaAs MES FET - NEC
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