C-BAND MEDIUM POWER GaAs MESFET NE850R599A
FEATURES
HIGH OUTPUT POWER: 0.5 W HIGH LINEAR GAIN: 9.5 dB HIGH EFFICIENCY (PAE): 38% SUPERIOR INTERMODULATION DISTORTION INDUSTRY STANDARD PACKAGING
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 99
5.2±0.3 1.0±0.1 4.0 MIN BOTH LEADS Gate φ2.2±0.2 4.0±0.1 Source
4.3±0.2
DESCRIPTION
The NE850R599A is...
