2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
PRELIMINARY DATA SHEET
GaAs MES FET
NE85002 SERIES
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
DESCRIPTION
The N...
Description
PRELIMINARY DATA SHEET
GaAs MES FET
NE85002 SERIES
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
DESCRIPTION
The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network. NE8500200 is the six-cells recessed gate chip used in ‘95’ package. The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device has a PHS. (Plated Heat Sink) NEC’s strigent quality assurance and test procedures assure the highest reliability and performance.
FEATURES
Class A operation High power output High reliability
110 100
100
240
PHYSICAL DIMENSIONS NE8500200 (CHIP) (unit: µm)
640 100 90 1800 100
SELECTION CHART
PACKAGE CODE-95 (unit: mm)
PERFORMANCE SPECIFIED PART NUMBER Pout (**) (dBm) GL (**) (dB) USABLE FREQUENCY (GHz) 2.0 to 10
2.5 ±0.3 DIA SOURCE
0.7 ±0.1 GATE
4.0 MIN.
NE8500200(*) NE8500200-WB(*) NE8500200-RG(*) NE8500295-4 NE8500295-6 NE8500295-8
33.8 min
8.0 min
5.9 ±0.2
33.8 min 33.8 min 33.5 min
10.5 min 9.5 min 8.0 min
3.5 to 5.5 5.5 to 7.5 7.5 to 8.5
DRAIN 14.0 ±0.3 18.5 MAX. 2.1 ±0.15 0.1 4.5 MAX. 0.2 MAX. 7.2 ±0.2 1.0
*
GB, RG indicate a type of containers for chips. WB: black carrier, RG: ring,
** Specified at the condition at the last page.
Document No. P10969EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan
©
1996
NE85002 SERIES
ABSOLUTE MAXIMUM R...
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