NE85001

PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package. The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device has a PHS. (Plated Heat Sink) NEC’s strigent quality assurance and test procedures assure the highest reliability and performance. FEATURES Class A operation High power output High reliability PHYSICAL DIMENSIONS NE8500100 (CHIP) (unit: µm) 65 170 146 SELECTION CHART 100 PERFORMANCE SPECIFIED PART NUMBER FORM Pout (**) (dBm) GL (**) (dB) USABLE FREQUENCY (GHz) 2.0 to 10 100 100 780 640 NE8500100(*) NE8500100-WB NE8500100-RG NE8500199 chip 28.5 min 9.0 typ PACKAGE CODE-99 (unit: mm) package 28.5 min 9.0 typ 2.0 to 10 4.0 MIN BOTH LEADS SOURCE 1.0 ±0.1 GATE φ 2.2 ±0.3 2 PLACES * WB, RG indicate a type of containers for chips. WB: black carrier, RG: ring,: gel-pack, ** Specified at the condition at the last page. 4.3 ±0.2 4.0 DRAIN 0.6 ±0.1 5.2 ±0.3 11.0 ±0.3 15.0 ±0.3 0.1 0.2 MAX. 1.7 ±0.15 6.0 ±0.2 5.0 MAX. 1.2 Document No. P10968EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan © 1996 NE85001 SERIES ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Drain Voltage Gate to Source Voltage Total Powe...