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NE76000L

NEC
Part Number NE76000L
Manufacturer NEC
Description LOW NOISE L TO Ku BAND GaAs MESFET
Published May 7, 2005
Detailed Description LOW NOISE L TO Ku BAND GaAs MESFET FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz Noise Figure, NF (dB) 4 3.5...
Datasheet PDF File NE76000L PDF File

NE76000L
NE76000L

Overview
LOW NOISE L TO Ku BAND GaAs MESFET FEATURES • LOW NOISE FIGURE NF = 1.
6 dB TYP at f = 12 GHz Noise Figure, NF (dB) 4 3.
5 Ga 3 2.
5 2 1.
5 1 NF 0.
5 0 1 NE76000 NOISE FIGURE & ASSOCIATED GAIN vs.
FREQUENCY VDS = 3 V, IDS = 10 mA 24 21 18 15 12 9 6 3 0 10 20 • LG = 0.
3 µm, WG = 280 µm • ION IMPLANTATION DESCRIPTION The NE76000 provides a low noise figure and high associated gain through K-Band.
The NE760 devices are fabricated by ion implantation for improved RF and DC performance, reliability, and uniformity.
These devices feature a recessed 0.
3 micron gate and triple epitaxial technology.
The surface of the device, except for bonding pads, is passivated with SiO2 and Si3N4 for scratch prote...


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