NE68939

PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 4 PIN MINI MOLD PACKAGE: NE68939 NE68939 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 +0.10 0.4 -0.05 (LEADS 2, 3, 4) 2.9 ± 0.2 0.95 0.85 2 3 1.9 1 4 DESCRIPTION The NE68939 is a low voltage, NPN Silicon Bipolar Transistor for pulsed power applications. The device is designed to operate from a 3.6 V supply, and deliver over 1/4 watt of power output at frequencies up to 2.0 GHZ with a 1:8 duty cycle. These characteristics make it an ideal device for TX driver stage in a 1.9 GHZ digital cordless telephone (DECT or PHS). The part is supplied in a SOT-143 (SC-61) 4-pin Mini-mold package and is available on tape and reel. The NE68939 transistors are manufactured to NEC's stringent quality assurance standards to ensure highest reliability and consistent superior performance. +0.10 0.6 -0.05 1) Collector 2) Emitter 3) Base 4) Emitter +0.2 1.1 -0.1 0.8 0.16 +0.10 -0.06 5˚ 0 to 0.1 5˚ ELECTRICAL CHARACTERISTICS (TA = 25 °C) PART NUMBER PACKAGE CODE SYMBOLS ICBO IEBO hFE P-1 Gp PARAMETERS Collector Cutoff Current, VCB = 5 V, IE = 0 Emitter Cutoff Current, VEB = 1 V, IC = 0 DC Current Gain, VCE = 3.6 V, IC = 100 mA Output Power Power Gain Collector Efficiency VCE = 3.6 V, f = 1.9 GHZ ICq = 2 mA (Class AB) Duty 1/8 dBm dB % MS 6.5 50 UNITS µA µA 30 24.5 8 62 10.0 MIN NE68...