NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 d...
NEC's
NPN SILICON HIGH FREQUENCY
TRANSISTOR
FEATURES
HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz
NE681 SERIES
HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz LOW COST
rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e E d w h o s l w PL l a r e t o o n f a f DESCRIPTION r d e e o s f c i Th i h f d t e of d m s n o e le fr m a s m l o l c a e c r e s a Ple ils: a t e 5 d 3 1 8 6 E N
E B
00 (CHIP) 35 (MICRO-X)
NEC's NE681 series of
NPN epitaxial silicon
transistors are designed for low noise, high gain, low cost amplifier applications. Both the chip and micro-x versions are suitable for amplifier applications up to 4 GHz. The NE681 die is also available in six different low cost plastic surface mount package styles. NE681's unique device characteristics allow you to use a single matching point to simultaneously achieve both low noise and high gain.
18 (SOT 343 STYLE)
19 (3 PIN ULTRA SUPER MINI MOLD)
NOISE FIGURE, GAIN MSG AND MAG vs. FREQUENCY
VCE = 3 V, IC = 5 mA
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
MSG
20
3.0
MAG
10
Associated Gain, Maximum Stable Gain and Maximum Available Gain, GA, MSG, MAG (dB)
Minimum Noise Figure, NF min (dB)
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
2.0 GA NF
0
1.0 0.5 1.0 2.0 3.0
Frequency, f (GHz)
NE681 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE PARAMETERS AND CONDITIONS Gain Bandwidth Product at V...
