NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
HIGH GAIN BANDWIDTH: fT = 25 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz NEW LOW PROFILE M16 PACKAGE: Flat Lead Style with a height of just 0.50mm
NE662M16
DESCRIPTION
The NE662M16 is fabricated using NEC's UHS0 25 GHz fT wafer process. With a typical trans...
