NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
DATA SHEET
NPN SILICON RF TRANSISTOR
NE661M04
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFIC...
DATA SHEET
NPN SILICON RF
TRANSISTOR
NE661M04
NPN SILICON RF
TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
FEATURES
Low noise and high gain with low collector current NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA fT = 25 GHz technology Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)
ORDERING INFORMATION
Part Number NE661M04 NE661M04-T2 Quantity Loose product (50 pcs) Taping product (3 kpcs/reel) Packaging Style 8 mm wide emboss taping 1 pin (emitter), 2 pin (collector) feed hole direction
Remark To order evaluation samples, consult your NEC sales representative (available in 50-pcs units).
ABSOLUTE MAXIMUM RATINGS
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot
Note
Ratings 15 3.3 1.5 12 39 150 –65 to +150
Unit V V V mA mW °C °C
Tj Tstg
Note TA = +25°C (free air)
THERMAL RESISTANCE
Item Junction to Case Resistance Junction to Ambient Resistance Symbol Rth j-c Rth j-a Value 240 650 Unit °C/W °C/W
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/type...