NE6500496

PRELIMINARY DATA SHEET GaAs MES FET NE6500496 4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6500496 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band. To reduce thermal resistance, the device has a PHS (Plated Heat Sink) structure. PACKAGE DIMENSION (UNIT: mm) 1.0 ± 0.1 4.0 MIN BOTHLEADS SOURCE GATE φ 2.2 ±0.3 2 SLACES 4.0 FEATURES Class A operation High output power: 36 dBm (typ) High gain: 11.5 dB (typ) High power added efficiency: 45 % (typ) Hermetically sealed ceramic package ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Drain Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature Temperature Cycling VDSX VGDX VGSX ID IG PT (*) Tch Tstg T∞ 15 –18 –12 4.5 25 25 175 –65 to +175 –40 to +120 * TC = 25 ˚C Caution V V V A mA W ˚C ˚C ˚C 4.3 ±0.2 DRAIN 0.6 ±0.1 5.2 ±0.3 11.0 ±0.3 15.0 ±0.3 0.1 0.2 MAX. 1.7 ±0.15 6.0 ±0.2 5.0 MAX. 1.2 Please handle this device at a static-free workstation, because this is an electrostatic sensitive device. Document No. P10971EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan © 1996 NE6500496 MAXIMUM OPERATION RANDGE CHARACTERISTIC Drain to Source Voltage Channel Temperature Input Power Gate Resistance SYMBOL VDS Tch Gcomp Rg MIN. – – – – TYP. 10 – – – MAX. 10 130 3 200 UNIT V ˚C dBcomp Ω ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Saturat...