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NE58219 Dataheets PDF



Part Number NE58219
Manufacturers NEC
Logo NEC
Description NECs NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
Datasheet NE58219 DatasheetNE58219 Datasheet (PDF)

NEC's NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD FEATURES • HIGH fT: 5 GHz TYP at VCE = 5 V , IC = 5 mA, f = 1 GHz • LOW Cre: 0.9 pF TYP at VCB = 5 V, IE = 0, f = 1 MHz 0.2 +0.1 –0 NE58219 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 19 • ULTRA SUPER MINI MOLD PACKAGE: 1.6 x 0.8 mm 1.6±0.1 0.8±0.1 2 1.6±0.1 1.0 0.5 DESCRIPTION NEC's NE58219 is a low supply voltage transistor designed for UHF Mixer and oscillator applications. The 3 pin ultra super mini mold package m.

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NEC's NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD FEATURES • HIGH fT: 5 GHz TYP at VCE = 5 V , IC = 5 mA, f = 1 GHz • LOW Cre: 0.9 pF TYP at VCB = 5 V, IE = 0, f = 1 MHz 0.2 +0.1 –0 NE58219 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 19 • ULTRA SUPER MINI MOLD PACKAGE: 1.6 x 0.8 mm 1.6±0.1 0.8±0.1 2 1.6±0.1 1.0 0.5 DESCRIPTION NEC's NE58219 is a low supply voltage transistor designed for UHF Mixer and oscillator applications. The 3 pin ultra super mini mold package makes this device ideally suited for high density surface mount assembly. 0.5 1 0.75±0.05 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO VCE(sat) hFE fT CRE |S21E|2 Notes: 1. Electronic Industrial Association of Japan 2. Pulsed measurement, pulse width ≤ 350 µs, Duty Cycle ≤ 2 %. 3. The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge. PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 15 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Collector Saturation Voltage at hFE = 10, IC = 5 mA DC Current Gain at VCE = 5 V, IC = 5 mA2 Gain Bandwidth at VCE = 5 V, IC = 5 mA Feedback Capacitance at VCB = 5 V, IE = 0, f = 1 MHz3 Insertion Power Gain at VCE = 5 V, IC = 5 mA, f = 1 GHz GHz pF dB 5.0 UNITS µA µA V 60 3.0 5.0 0.9 1.2 MIN NE58219 2SC5004 19 TYP MAX 0.1 0.1 0.5 120 California Eastern Laboratories 0 to 0.1 0.15 +0.1 –0.05 0.6 0.3 +0.1 –0 3 NE58219 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW °C °C RATINGS 20 12 3 60 100 125 -55 to +125 ORDERING INFORMATION PART NUMBER NE58219-T1 QUANTITY PACKAGING 3000 pcs./reel Embossed tape 8mm wide. Pin 3 (colllector) face to perforation side of tape. Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 150 200 DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 5 V Total Power Dissipation, PT (mW) Free Air 100 DC Current Gain, hFE 100 50 50 20 0 0 50 100 150 10 0.5 1 2 5 10 20 50 Ambient Temperature, TA (°C) Collector Current, IC (mA) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 24 VCE = 5 V GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10 Gain Bandwidth Product, fT (GHz) VCE = 5 V f = 1 GHz 8 Collector Current, IC (mA) 16 6 4 8 2 0 0 0.2 0.4 0.6 0.8 1.0 0 0.5 1 2 5 10 20 50 Base to Emitter Voltage, VBE (V) Collector Current, IC (mA) NE58219 TYPICAL PERFORMANCE CURVES (TA = 25°C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 30 IB = 120 µA INSERTION POWER GAIN vs. COLLECTOR CURRENT 14 Insertion Power Gain, |S21e|2 (dB) VCE = 5 V f = 1 GHz 12 10 8 6 4 2 .


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