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NE5539D Dataheets PDF



Part Number NE5539D
Manufacturers Philipss
Logo Philipss
Description High frequency operational amplifier
Datasheet NE5539D DatasheetNE5539D Datasheet (PDF)

RF COMMUNICATIONS PRODUCTS NE/SE5539 High frequency operational amplifier Product specification IC11 April 15, 1992 Philips Semiconductors Philips Semiconductors Product specification High frequency operational amplifier NE/SE5539 DESCRIPTION The NE/SE5539 is a very wide bandwidth, high slew rate, monolithic operational amplifier for use in video amplifiers, RF amplifiers, and extremely high slew rate amplifiers. Emitter-follower inputs provide a true differential input impedance device. .

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RF COMMUNICATIONS PRODUCTS NE/SE5539 High frequency operational amplifier Product specification IC11 April 15, 1992 Philips Semiconductors Philips Semiconductors Product specification High frequency operational amplifier NE/SE5539 DESCRIPTION The NE/SE5539 is a very wide bandwidth, high slew rate, monolithic operational amplifier for use in video amplifiers, RF amplifiers, and extremely high slew rate amplifiers. Emitter-follower inputs provide a true differential input impedance device. Proper external compensation will allow design operation over a wide range of closed-loop gains, both inverting and non-inverting, to meet specific design requirements. PIN CONFIGURATION D, F, N Packages 1 2 3 4 5 6 7 + – 14 13 12 11 + INPUT NC -VSUPPLY NC - INPUT NC FREQUENCY COMPENS. NC FEATURES • Bandwidth – Unity gain - 350MHz – Full power - 48MHz – GBW - 1.2GHz at 17dB VOSADJ / AV ADJ NC GROUND 10 +V 9 8 NC OUTPUT • Slew rate: 600/Vµs • AVOL: 52dB typical • Low noise - 4nV√Hz typical • MIL-STD processing available APPLICATIONS Top View SL00570 Figure 1. Pin Configuration • High speed datacom • Video monitors & TV ORDERING INFORMATION DESCRIPTION 14-Pin Plastic Dual In-Line Package (DIP) 14-Pin Plastic Small Outline (SO) package 14-Pin Ceramic Dual In-Line Package 14-Pin Ceramic Dual In-Line Package • Satellite communications • Image processing • RF instrumentation & oscillators • Magnetic storage • Military communications TEMPERATURE RANGE 0 to +70°C 0 to +70°C 0 to +70°C -55 to +125°C ORDER CODE NE5539N NE5539D NE5539F SE5539F DWG # SOT27-1 SOT108-1 0581B 0581B ABSOLUTE MAXIMUM RATINGS1 SYMBOL VCC PDMAX Supply voltage Maximum power dissipation, TA = 25°C (still-air)2 F package N package D package Operating temperature range NE SE Storage temperature range Max junction temperature Lead soldering temperature (10sec max) PARAMETER RATING ±12 UNITS V 1.17 1.45 0.99 0 to 70 -55 to +125 -65 to +150 150 +300 W W W °C °C °C °C °C TA TSTG TJ TSOLD NOTES: 1. Differential input voltage should not exceed 0.25V to prevent excesive input bias current and common-mode voltage 2.5V. These voltage limits may be exceeded if current is limited to less than 10mA. 2. Derate above 25°C, at the following rates: F package at 9.3mW/°C N package at 11.6mW/°C D package at 7.9mW/°C 1992 Apr 15 2 853-0814 06456 Philips Semiconductors Product specification High frequency operational amplifier NE/SE5539 EQUIVALENT CIRCUIT (12) FREQUENCY COMP. (10) +VCC R18 (–) 14 INVERTING INPUT R19 R3 R5 R2 (+) 1 NON–INVERTING INPUT R6 Q1 Q2 Q4 Q6 R8 Q5 Q3 Q7 Q8 R20 R21 R1 R4 R9 R10 2.2k (8) OUTPUT (7) GRD R13 Q10 R11 Q11 R12 R15 R14 R16 R17 (3) –VCC 5 R7 Q9 SL00571 Figure 2. Equivalent Circuit DC ELECTRICAL CHARACTERISTICS VCC = ±8V, TA = 25°C; unless otherwise specified. SYMBOL VOS PARAMETER Input offset voltage ∆VOS/∆T Over temp IOS Input offset current ∆IOS/∆T Over temp IB Input bias current ∆IB/∆T CMRR RIN ROUT Common mode rejection ratio Input impedance Output impedance F = 1kHz, RS = 100Ω, VCM ±1.7V Over temp 70 70 TA = 25°C TA = 25°C TEST CONDITIONS VO = 0V 0V, RS = 100Ω Over temp TA = 25°C SE5539 MIN TYP 2 2 5 0.1 0.1 0.5 6 5 10 80 80 100 10 100 10 70 25 13 5 10 80 20 3 1 0.5 2 MAX 5 3 2.5 5 5 mV µV/°C µA nA/°C µA nA/°C dB kΩ Ω MIN NE5539 TYP MAX UNITS 1992 Apr 15 3 Philips Semiconductors Product specification High frequency operational amplifier NE/SE5539 DC ELECTRICAL CHARACTERISTICS (Continued) VCC = ±8V, TA = 25°C; unless otherwise specified. SYMBOL VOUT PARAMETER Output voltage swing TEST CONDITIONS RL = 150Ω to GND and 470Ω to -VCC RL = 25Ω to GND Over temp RL = 25Ω to GND TA = 25°C +Swing -Swing +Swing -Swing +Swing -Swing +2.3 -1.5 +2.5 -2.0 +3.0 -2.1 +3.1 -2.7 14 14 11 11 300 18 17 15 14 1000 200 47 52 1000 57 11 15 14 18 SE5539 MIN TYP MAX MIN +2.3 -1.7 NE5539 TYP +2.7 -2.2 MAX UNITS V VOUT Output voltage swing V ICC+ CC ICCCC PSRR AVOL AVOL Positive supply current Negative supply current Power supply rejection ratio Large signal voltage gain Large signal voltage gain VO = 0, R1 = ∞, Over temp VO = 0, R1 = ∞, TA = 25°C VO = 0, R1 = ∞, Over temp VO = 0, R1 = ∞, TA = 25°C ∆VCC = ±1V, Over temp ∆VCC = ±1V, TA = 25°C VO = +2.3V, -1.7V, RL = 150Ω to GND, 470Ω to -VCC VO = +2.3V, -1.7V RL = 2Ω to GND Over temp TA = 25°C Over temp TA = 25°C 46 48 mA mA µV/V dB dB 47 60 53 58 52 57 dB AVOL Large signal voltage gain VO = +2.5V, -2.0V RL = 2Ω to GND DC ELECTRICAL CHARACTERISTICS VCC = ±6V, TA = 25°C; unless otherwise specified. SYMBOL VOS IOS IB CMRR ICC+ CC ICCCC PSRR PARAMETER Input offset voltage Input offset current Input bias current Common-mode rejection ratio Positive supply current Negative supply current Power supply rejection ratio ∆VCC = ±1V Over VOUT O voltage l swing i Output RL = 150Ω to GND and 390Ω to –VCC temp TA = 25°C VCM = ±1.3V, RS = 100Ω Over temp TA = 25°C Over temp TA = 25°CmA Over temp TA = 25°C +Swing –Swing +Swing –Swing +1.4 –1.1 +1.5 –1.4 +2.0 –1.7 +2.0 –1.


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