MJW21195 (PNP) MJW21196 (NPN)
Silicon Power Transistors
The MJW21195 and MJW21196 utilize Perforated Emitter technology...
MJW21195 (
PNP) MJW21196 (
NPN)
Silicon Power
Transistors
The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
Features
Total Harmonic Distortion Characterized High DC Current Gain − hFE = 20 Min @ IC = 8 Adc Excellent Gain Linearity High SOA: 2.25 A, 80 V, 1 Second Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage − 1.5 V Collector Current − Continuous Collector Current − Peak (Note 1)
Symbol VCEO VCBO VEBO VCEX IC
Value 250 400 5.0 400 16 30
Unit Vdc Vdc Vdc Vdc Adc
Base Current − Continuous Total Power Dissipation @ TC = 25°C Derate Above 25°C
IB 5.0 Adc PD 200 W
1.43 W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg − 65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
0.7 °C/W
Thermal Resistance, Junction−to−Ambient RqJA
40 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please download the ON S...
