MJL4281A

MJL4281A (NPN) MJL4302A (PNP) Preferred Device Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are PowerBaset power transistors for high power audio. http://onsemi.com 350 V Collector−Emitter Sustaining Voltage Gain Complementary: Gain Linearity from 100 mA to 5 A High Gain − 80 to 240 hFE = 50 (min) @ IC = 8 A Low Harmonic Distortion High Safe Operation Area − 1.0 A/100 V @ 1 Second High fT 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 350 VOLTS 230 WATTS MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage − 1.5 V Collector Current − Continuous Collector Current − Peak (Note 1) Base Current − Continuous Total Power Dissipation @ TC = 25°C Derate Above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO VCEX IC IB PD TJ, Tstg Value 350 350 5.0 350 15 30 1.5 230 1.84 − 65 to +150 Unit Vdc Vdc Vdc Vdc Adc Adc Watts °C/W °C MJL 4xxxA LLYWW 1 2 3 TO−264 CASE 340G STYLE 2 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RqJC Max 0.54 Unit °C/W 1 BASE 3 EMITTER 2 COLLECTOR MJL4xxxA xxx LL Y WW = Device Code = 281 OR 302 = Location Code = Year = Work Week 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%. ORDERING INFORMATION Device MJL4281A MJL4302A Package TO−264 TO−264 Shipping 25 Units/Rail 25 Units/Rail Preferred devices are recommended choic...