MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJL3281A/D
Designer's
Complementary NPN-PNP Silicon Pow...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJL3281A/D
Designer's
Complementary
NPN-
PNP Silicon Power Bipolar
Transistor
The MJL3281A and MJL1302A are PowerBase power
transistors for high power audio, disk head positioners and other linear applications. Designed for 100 W Audio Frequency Gain Complementary: — Gain Linearity from 100 mA to 7 A — High Gain — 60 to 175 — hFE = 45 (Min) @ IC = 8 A Low Harmonic Distortion High Safe Operation Area — 1 A/100 V @ 1 sec High fT — 30 MHz Typical
™ Data Sheet
MJL3281A*
PNP MJL1302A*
*Motorola Preferred Device
NPN
15 AMPERE COMPLEMENTARY SILICON POWER
TRANSISTORS 200 VOLTS 200 WATTS
CASE 340G–02, STYLE 2 TO–264
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector–Emitter Voltage — 1.5 V Collector Current — Continuous Collector Current — Peak (1) Base Current — Continuous Total Power Dissipation @ TC = 25°C Derate Above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO VCEX IC IB PD TJ, Tstg Value 200 200 7 200 15 25 1.5 200 1.43 – 65 to +150 Unit Vdc Vdc Vdc Vdc Adc Adc Watts W/°C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle <10%.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing b...