MJL16218

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJL16218/D ™ Data Sheet SCANSWITCH™ Designer's MJL16218* *Motorola Preferred Device NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJL16218 is a state–of–the–art SWITCHMODE™ bipolar power transistor. It is specifically designed for use in horizontal deflection circuits for 20 mm diameter neck, high and very high resolution, full page, monochrome monitors. 1500 Volt Collector–Emitter Breakdown Capability Typical Dynamic Desaturation Specified (New Turn–Off Characteristic) Application Specific State–of–the–Art Die Design Fast Switching: 175 ns Inductive Fall Time (Typ) 2000 ns Inductive Storage Time (Typ) Low Saturation Voltage: 0.2 Volts at 5.0 Amps Collector Current and 2.0 A Base Drive Low Collector–Emitter Leakage Current — 250 µA Max at 1500 Volts — VCES High Emitter–Base Breakdown Capability For High Voltage Off Drive Circuits — 8.0 Volts (Min) MAXIMUM RATINGS Rating Collector–Emitter Breakdown Voltage Collector–Emitter Sustaining Voltage Emitter–Base Voltage Collector Current — Continuous — Pulsed (1) Base Current — Continuous — Pulsed (1) Maximum Repetitive Emitter–Base Avalanche Energy Total Power Dissipation @ TC = 25°C @ TC = 100°C Derated above TC = 25°C Operating and Storage Temperature Range Symbol VCES VCEO(sus) VEBO IC ICM IB IBM W (BER) PD POWER TRANSISTOR 15 AMPERES 1500 VOLTS — VCES 170 WATTS CASE 340G–02, STYLE 2 TO–3PBL Value 1500 650 8...