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MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
Complementary Darlington Silicon Power Transistors
These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications.
Features
• High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types) • Collector−Emitter Sustaining Voltage
VCEO(sus) = 150 Vdc (Min) — MJH11018, 17 = 200 Vdc (Min) — MJH11020, 19 = 250 Vdc (Min) — MJH11022, 21
• Low Collector−Emitter Saturation Voltage
VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A = 1.8 V (Typ) @ IC = 10 A
• Monolithic Construction • These are Pb−Free Devices
MAXIMUM RATINGS
Rating
Symbol
Collector−Emitter Voltage MJH11018, MJH11017 MJH11020, MJH11019 MJH11022, MJH11021
VCEO
Max
150 200 250
Unit Vdc
Collector−Base Voltage MJH11018, MJH11017 MJH11020, MJH11019 MJH11022, MJH11021
VCB
Vdc 150 200 250
Emitter−Base Voltage
Collector Current − Continuous − Peak (Note 1)
VEB 5.0 Vdc
IC 15 Adc 30
.