MJE801

MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC Complement to MJE700/701/702/703 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature : MJE800/801 : MJE802/803 : MJE800/801 : MJE802/803 Value 60 80 60 80 5 4 0.1 40 150 - 55 ~ 150 Units V V V V V A A W °C °C R1 R2 E B Equivalent Circuit C R 1 ≅ 10 k Ω R 2 ≅ 0.6 k Ω Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : MJE800/801 : MJE802/803 Collector Cut-off Current : MJE800/801 : MJE802/803 Collector Cut-off Current Test Condition IC = 50mA, IB = 0 Min. 60 80 VCE = 60V, IB = 0 VCE = 80V, IB = 0 VCB = Rated BVCEO, IE = 0 VCB = Rated BVCEO, IE = 0 TC = 100°C VBE = 5V, IC = 0 VCE = 3V, IC = 1.5A VCE = 3V, IC = 2A VCE = 3V, IC = 4A IC = 1.5A, IB = 30mA IC = 2A, IB = 40mA IC = 4A, IB = 40mA VCE = 3V, IC = 1.5A VCE = 3V, IC = 2A VCE = 3V, IC = 4A 750 750 100 2.5 2.8 3 2.5 2.5 3 V V V V V V 100 100 100 500 2 Max. Units V V µA µA µA µA mA ICEO ICBO IEBO hFE Emitter Cut-off Current DC Current Gain : MJE800/802 : MJE801/803 : ALL DEVICES VCE(...