MJE800/801/802/803
MJE800/801/802/803
Monolithic Construction With Built-in BaseEmitter Resistors
High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC Complement to MJE700/701/702/703
1
TO-126 2.Collector 3.Base
1. Emitter
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEB...
