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MJE5852 Dataheets PDF



Part Number MJE5852
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description HIGH VOLTAGE PNP POWER TRANSISTOR
Datasheet MJE5852 DatasheetMJE5852 Datasheet (PDF)

® MJE5852 HIGH VOLTAGE PNP POWER TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s PNP TRANSISTOR s HIGH VOLTAGE CAPABILITY )APPLICATIONS: t(ss SWITCHING REGULATORS cs MOTOR CONTROL us INVERTERS rod )DESCRIPTION P t(sThe MJE5852 is manufactured using High te cVoltage PNP Multi-Epitaxial technology for high le uswitching speed and high voltage capability. dIt is intended for use in high frequency and so roefficiency converters, switching regulators and ) - Ob lete Pmotor control. 3 2 1 .

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® MJE5852 HIGH VOLTAGE PNP POWER TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s PNP TRANSISTOR s HIGH VOLTAGE CAPABILITY )APPLICATIONS: t(ss SWITCHING REGULATORS cs MOTOR CONTROL us INVERTERS rod )DESCRIPTION P t(sThe MJE5852 is manufactured using High te cVoltage PNP Multi-Epitaxial technology for high le uswitching speed and high voltage capability. dIt is intended for use in high frequency and so roefficiency converters, switching regulators and ) - Ob lete Pmotor control. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM bsolete PPrroodduucctt((ss) - ObsoABSOLUTE MAXIMUM RATINGS O teSymbol oleVCES sVCEO ObVEBO Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Value -450 -400 -7 Unit V V V IC Collector Current -8 A ICM Collector Peak Current (tp < 5ms) -16 A IB Base Current -4 A IBM Base Peak Current (tp < 5ms) -8 A Ptot Total Dissipation at Tc ≤ 25 oC Tstg Storage Temperature Tj Max. Operating Junction Temperature 80 -65 to 150 150 W oC oC September 2003 1/4 MJE5852 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient Max Max 1.56 62.5 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-off VCE = -450 V Current (VBE = -1.5V) -500 µA IEBO Emitter Cut-off Current VEB = -6 V -1 mA (IC = 0) VCEO(sus)∗ Collector-Emitter )Sustaining Voltage t(s(IB = 0) IC = -10 mA cVCE(sat)∗ Collector-Emitter uSaturation Voltage IC = -4 A IC = -8 A IB = -1 A IB = -3 A dVBE(sat)∗ Base-Emitter ro )Saturation Voltage IC = -4 A IB = -1 A te P ct(shFE∗ DC Current Gain IC = -2 A IC = -5 A VCE = -5 V VCE = -5 V le uRESISTIVE LOAD dts Storage Time so rotf Fall Time IC = -4 A IB1 = -IB2 = -1 A VCC = -250 V tp = 40 µs b P∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % OObbssoolleettee PPrroodduucctt((ss)) -- OObsoleteFor PNPtype voltageandcurrentvaluesarenegative. -400 15 5 V -2 V -5 V -1.5 V 2 µs 0.5 µs 2/4 MJE5852 TO-220 MECHANICAL DATA DIM. MIN. mm TYP. MAX. MIN. inch TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.052 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 )F2 1.14 1.70 0.044 0.067 t(sG 4.95 5.15 0.194 0.202 cG1 2.40 2.70 0.094 0.106 uH2 10.00 10.40 0.394 0.409 dL2 16.40 0.645 Pro t(s)L4 13.00 14.00 0.511 0.551 L5 2.65 2.95 0.104 0.116 te cL6 15.25 15.75 0.600 0.620 le duL7 6.20 6.60 0.244 0.260 so roL9 3.50 3.93 0.137 0.154 b PM 2.60 0.102 OObbssoolleettee PPrroodduucctt((ss)) -- OObsoleteDIA. 3.75 3.85 0.147 0.151 P011CI 3/4 MJE5852 Obssoolleettee PPrroodduucctt((ss)) -- OObbssoolleettee PPrroodduucctt((ss))Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences bof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is Ogranted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4 .


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