Document
® MJE5852
HIGH VOLTAGE PNP POWER TRANSISTOR
s STMicroelectronics PREFERRED
SALESTYPE
s PNP TRANSISTOR
s HIGH VOLTAGE CAPABILITY
)APPLICATIONS: t(ss SWITCHING REGULATORS cs MOTOR CONTROL us INVERTERS rod )DESCRIPTION P t(sThe MJE5852 is manufactured using High te cVoltage PNP Multi-Epitaxial technology for high le uswitching speed and high voltage capability. dIt is intended for use in high frequency and so roefficiency converters, switching regulators and ) - Ob lete Pmotor control.
3 2 1
TO-220
INTERNAL SCHEMATIC DIAGRAM
bsolete PPrroodduucctt((ss) - ObsoABSOLUTE MAXIMUM RATINGS
O teSymbol oleVCES sVCEO
ObVEBO
Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0)
Value -450 -400
-7
Unit V V V
IC Collector Current
-8 A
ICM Collector Peak Current (tp < 5ms)
-16 A
IB Base Current
-4 A
IBM Base Peak Current (tp < 5ms)
-8 A
Ptot Total Dissipation at Tc ≤ 25 oC Tstg Storage Temperature Tj Max. Operating Junction Temperature
80 -65 to 150
150
W oC oC
September 2003
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MJE5852
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient
Max Max
1.56 62.5
oC/W oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ICES Collector Cut-off
VCE = -450 V
Current (VBE = -1.5V)
-500 µA
IEBO Emitter Cut-off Current VEB = -6 V
-1 mA
(IC = 0)
VCEO(sus)∗ Collector-Emitter
)Sustaining Voltage t(s(IB = 0)
IC = -10 mA
cVCE(sat)∗ Collector-Emitter uSaturation Voltage
IC = -4 A IC = -8 A
IB = -1 A IB = -3 A
dVBE(sat)∗ Base-Emitter ro )Saturation Voltage
IC = -4 A
IB = -1 A
te P ct(shFE∗ DC Current Gain
IC = -2 A IC = -5 A
VCE = -5 V VCE = -5 V
le uRESISTIVE LOAD dts Storage Time so rotf Fall Time
IC = -4 A IB1 = -IB2 = -1 A
VCC = -250 V tp = 40 µs
b P∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % OObbssoolleettee PPrroodduucctt((ss)) -- OObsoleteFor PNPtype voltageandcurrentvaluesarenegative.
-400
15 5
V
-2 V -5 V -1.5 V
2 µs 0.5 µs
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MJE5852
TO-220 MECHANICAL DATA
DIM.
MIN.
mm TYP.
MAX.
MIN.
inch TYP.
MAX.
A 4.40
4.60 0.173
0.181
C 1.23
1.32 0.048
0.052
D 2.40
2.72 0.094
0.107
E 0.49
0.70 0.019
0.027
F 0.61
0.88 0.024
0.034
F1 1.14
1.70 0.044
0.067
)F2 1.14
1.70 0.044
0.067
t(sG 4.95
5.15 0.194
0.202
cG1 2.40
2.70 0.094
0.106
uH2 10.00
10.40
0.394
0.409
dL2 16.40
0.645
Pro t(s)L4 13.00
14.00
0.511
0.551
L5 2.65
2.95 0.104
0.116
te cL6 15.25
15.75
0.600
0.620
le duL7 6.20
6.60 0.244
0.260
so roL9 3.50
3.93 0.137
0.154
b PM 2.60
0.102
OObbssoolleettee PPrroodduucctt((ss)) -- OObsoleteDIA. 3.75
3.85 0.147
0.151
P011CI
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MJE5852
Obssoolleettee PPrroodduucctt((ss)) -- OObbssoolleettee PPrroodduucctt((ss))Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences bof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is Ogranted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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