MJE2955T
®
MJE3055T
COMPLEMENTARY SILICON POWER TRANSISTORS
s STMicroelectronics PREFERRED SALESTYPES
s COMPLEMENTAR...
MJE2955T
®
MJE3055T
COMPLEMENTARY SILICON POWER
TRANSISTORS
s STMicroelectronics PREFERRED SALESTYPES
s COMPLEMENTARY
PNP -
NPN DEVICES
DESCRIPTION The MJE3055T is a silicon Epitaxial-Base
NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary
PNP type is MJE2955T.
3 2 1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCEO Collector-Emitter Voltage (IB = 0)
VCBO Collector-Base Voltage (IE = 0)
VEBO Emitter-Base Voltage (IC = 0)
IC
Collector Current
IB
Base Current
Ptot Total Power Dissipation at Tcase ≤ 25 oC
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
For
PNP types voltage and current values are negative.
September 2003
NPN PNP
Value MJE3055T MJE2955T
60 70 5 10 6 75 -55 to 150 150
Unit
V V V A A W oC oC
1/4
MJE2955T / MJE3055T
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
1.66
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICEO
Collector Cut-off Current (IB = 0)
VCE = 30 V
ICEX
Collector Cut-off Current (VBE = 1.5V)
VCE = 70 V Tcase = 150oC
ICBO
Collector Cut-off Current (IE = 0)
VCBO = 70 V Tcase = 150oC
IEBO
Emitter Cut-off Current (IC = 0)
VCEO(sus)∗ Collector-Emitter Sustaining Voltage (IB = 0)
VCE(sat)∗ Collector-Emitter Sustaining Voltage
VEBO = 5 V IC = 200 mA
IC = 4 A IC = 10 A
IB = 0.4 A IB = 3.3 A
VBE(on)∗ Base-Emitt...