MJE210

® MJE210 SILICON PNP TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s PNP TRANSISTOR DESCRIPTION )The MJE210 is a silicon Epitaxial-Base PNP t(stransistor in Jedec SOT-32 plastic package, cdesigned for low voltage, low power, high gain Produ t(s)audio amplifier applications. 1 2 3 SOT-32 ) - Obsolleettee ProducINTERNAL SCHEMATIC DIAGRAM Obsolettee PPrroodduucctt((ss) - ObsoABSOLUTE MAXIMUM RATINGS leSymbol Parameter soVCBO bVCEO O VEBO Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Base-Emitter Voltage (IC = 0) Value -40 -25 -8 Unit V V V IC Collector Current -5 A ICM Collector Peak Current (tp < 5 ms) -10 A IB Base Current -1 A Ptot Total Power Dissipation at Tcase ≤ 25 oC at Tamb ≤ 25 oC Tstg Storage Temperature Tj Max Operating Junction Temperature 15 1.5 -65 to 150 150 W oC oC September 2003 1/4 MJE210 THERMAL DATA Rthj-amb Thermal Resistance Junction-ambient Rthj-case Thermal Resistance Junction-case Max Max 83.4 8.34 oC...