MJD41C

MJD41C MJD41C General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, “- I” Suffix) Electrically Similar to Popular TIP41 and TIP41C 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value 100 100 5 6 10 2 20 1.75 150 - 65 ~ 150 Units V V V A A A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) ICEO ICES IEBO hFE VCE(sat) VBE(on) fT Parameter * Collector-Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage Current Gain Bandwidth Product Test Condition IC = 30mA, IB = 0 VCE = 60V, IB = 0 VCE = 100V, VBE = 0 VBE = 5V, IC = 0 VCE = 4V, IC = 0.3A VCE = 4V, IC = 3A IC = 6A, IB = 600mA VCE = 6A, IC = 4A VCE = 10V, IC = 500mA 3 30 15 Min. 100 Max. 50 10 0.5 75 1.5 2 V V MHz Units V µA uA mA * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 MJD41C Typical Characteristics ...