MJD340 ® MJD350
COMPLEMENTARY SILICON POWER TRANSISTORS
s STMicroelectronics PREFERRED SALESTYPES
s COMPLEMENTARY PNP ...
MJD340 ® MJD350
COMPLEMENTARY SILICON POWER
TRANSISTORS
s STMicroelectronics PREFERRED SALESTYPES
s COMPLEMENTARY
PNP -
NPN DEVICES s MEDIUM VOLTAGE CAPABILITY s SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") s ELECTRICAL SIMILAR TO MJE340 AND MJE350
APPLICATIONS s SOLENOID/RELAY DRIVERS s GENERAL PURPOSE SWITCHING AND
AMPLIFIER
DESCRIPTION The MJD340 and MJD350 form complementary
NPN -
PNP pairs. They are manufactured using Medium Voltage Epitaxial-Planar technology, resulting in a rugged high performance cost-effective
transistor.
3 1
DPAK TO-252 (Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO Collector-Base Voltage (IE = 0) VCEO Collector-Emitter Voltage (IB = 0) VEBO Emitter-Base Voltage (IC = 0)
IC Collector Current ICM Collector Peak Current (tp = 25 oC) Ptot Total Power Dissipation at Tcase ≤ 25 oC Tstg Storage Temperature Tj Max Operating Junction Temperature
For
PNP types voltage and current values are negative.
September 2003
NPN PNP
Value MJD340 MJD350
300 300
3 0.5 0.75 15 -65 to 150 150
Unit
V V V A A W oC oC
1/5
MJD340 / MJD350
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient
Max Max
8.33 100
oC/W oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off Current (vBE = 0)
VCB = 300 V
IEBO
Emitter Cut-off Current VEB = 3 V (IC = 0)
VCEO(sus)∗ Collect...
