MJ4032

MJ4032 MJ4035 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s s SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS GENERAL PURPOSE SWITCHING s GENERAL PURPOSE AMPLIFIERS s 1 2 TO-3 DESCRIPTION The MJ4035 is silicon epitaxial-base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case. It is inteded for use in general purpose and amplifier applications. The complementary PNP type is the MJ4032. INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 6 KΩ R2 Typ. = 55 Ω ABSOLUTE MAXIMUM RATINGS Symbol Parameter PNP NPN V CBO V CEO V EBO IC IB P tot T stg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Dissipation at T c ≤ 25 o C Storage Temperature Max. Operating Junction Temperature Value MJ4032 MJ4035 100 100 5 16 0.5 150 -65 to 200 200 V V V A A W o o Unit C C For PNP types voltage and current values are negative. June 1997 1/4 MJ4032 / MJ4035 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.17 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER I CEO I EBO Parameter Collector Cut-off Current (R BE = 1K Ω ) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 100 V V CE = 100 V V CE = 50 V V EB = 5 V I C = 100 mA I C = 10 A I C = 16 A I C = 1...