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MJ21195 − PNP MJ21196 − NPN
Preferred Devices
Silicon Power Transistors
The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
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Total Harmonic Distortion Characterized High DC Current Gain − hFE = 25 Min @ IC = 8 Adc Excellent Gain Linearity High SOA: 3 A, 80 V, 1 Sec Pb−Free Packages are Available*
16 AMPERES COMPLEMENTARY SILICONPOWER TRANSISTORS 250 VOLTS, 250 WATTS
MAXIMUM RATINGS
Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage − 1.5V Collector Current − Continuous − Peak (Note 1) Symbol VCEO VCBO VEBO VCEX IC IB PD TJ, Tstg Value 250 400 5 400 16 30 5 250 1.43 −65 to +200 Unit Vdc Vdc Vdc Vdc Adc TO−204AA (TO−3) CASE 1−07
MARKING DIAGRAM
Adc W W/_C _C MJ2119xG AYWW MEX
Base Current − Continuous Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction−to−Case Symbol RqJC Max 0.7 Unit _C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
MJ2119x = Device Code x = 5 or 6 G = Pb−Free Package A = Assembly Location Y = Year WW = Work Week MEX = Country of Origin
ORDERING INFORMATION
Device MJ21195 MJ21195G MJ21196 MJ21196G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
Package TO−204 TO−204 (Pb−Free) TO−204 TO−204 (Pb−Free)
Shipping 100 Units / Tray 100 Units / Tray 100 Units / Tray 100 Units / Tray
Preferred devices are recommended choices for future use and best overall value.
1
February, 2006 − Rev. 4
Publication Order Number: MJ21195/D
MJ21195 − PNP
MJ21196 − NPN
ELECTRICAL CHARACTERISTICS (TC = 25°C ± 5°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCE = 200 Vdc, IB = 0) Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non−repetitive) (VCE = 80 Vdc, t = 1 s (non−repetitive) ON CHARACTERISTICS DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) (IC = 16 Adc, VCE = 5 Vdc) Base−Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS (Matched pair hFE = 50 @ 5 A/5 V) Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2% THD hFE unmatched hFE matched fT Cob − − 4 − 0.8 0.08 − − − − − 500 MHz pF % hFE 25 8 VBE(on) VCE(sat) − − − − 1.4 4 − − − − 2.2 Vdc Vdc 75 − IS/b 5 2.5 − − − − Adc VCEO(sus) ICEO IEBO ICEX 250 − − − − − − − − 100 100 100 Vdc mAdc mAdc mAdc Symbol Min Typical Max Unit
PNP MJ21195
6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 VCE = 10 V 5V 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 f T, CURRENT BANDWIDTH PRODUCT (MHz) f T, CURRENT BANDWIDTH PRODUCT (MHz)
NPN MJ21196
10 V VCE = 5 V
TJ = 25°C ftest = 1 MHz 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10
TJ = 25°C ftest = 1 MHz 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10
Figure 1. Typical Current Gain Bandwidth Product
Figure 2. Typical Current Gain Bandwidth Product
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2
MJ21195 − PNP
MJ21196 − NPN
TYPICAL CHARACTERISTICS
PNP MJ21195
1000 1000
NPN MJ21196
h FE , DC CURRENT GAIN
100
TJ = 100°C
25°C
h FE , DC CURRENT GAIN
100
TJ = 100°C
25°C
VCE = 20 V 10 0.1
−25 °C 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 10 0.1
−25 °C VCE = 20 V 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100
Figure 3. DC Current Gain, VCE = 20 V
Figure 4. DC Current Gain, VCE = 20 V
PNP MJ21195
1000 1000
NPN MJ21196
h FE , DC CURRENT GAIN
100
TJ = 100°C
25°C
h FE , DC CURRENT GAIN
100
TJ = 100°C 25°C −25 °C
−25 °C VCE = 5 V 10 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100
10
VCE = 5 V 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100
Figure 5. DC Current Gain, VCE = 5 V PNP MJ21195
30 IC , COLLECTOR CURRENT (A) 25 20 15 10 5.0 0 TJ = 25°C 0 5.0 10 15 20 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 25 IB = 2 A 1A 0.5 A IC , COLLECTOR CURRENT (A) 1.5 A 30 25 20
Figure 6. DC Current Gain, VCE = 5 V NPN MJ21196
IB = 2 A 1.5 .