MJ21193 - PNP MJ21194 - NPN
Silicon Power Transistors
The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter te...
MJ21193 -
PNP MJ21194 -
NPN
Silicon Power
Transistors
The MJ21193 (
PNP) and MJ21194 (
NPN) utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
Features
Total Harmonic Distortion Characterized High DC Current Gain Excellent Gain Linearity High SOA These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector−Emitter Voltage − 1.5 V
Collector Current − Continuous
Collector Current − Peak (Note 1)
Base Current − Continuous
Total Power Dissipation Derate Above 25°C
@
TC
=
25°C
VCEO VCBO VEBO VCEX
IC ICM IB PD
250 Vdc 400 Vdc
5 Vdc 400 Vdc 16 Adc 30 Adc
5 Adc 250 W 1.43 W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg − 65 to +200 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. (continued)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
0.7 °C/W
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Refere...