MJ15022 (NPN), MJ15024 (NPN)
Silicon Power Transistors
The MJ15022 and MJ15024 are power transistors designed for high ...
MJ15022 (
NPN), MJ15024 (
NPN)
Silicon Power
Transistors
The MJ15022 and MJ15024 are power
transistors designed for high power audio, disk head positioners and other linear applications.
Features
High Safe Operating Area High DC Current Gain These Devices are Pb−Free and are RoHS Compliant* Complementary to MJ15023 (
PNP), MJ15025 (
PNP)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
MJ15022 MJ15024
VCEO
Vdc 200 250
Collector−Base Voltage
MJ15022 MJ15024
VCBO
Vdc 350 400
Emitter−Base Voltage Collector−Emitter Voltage Collector Current − Continuous Collector Current − Peak (Note 1) Base Current − Continuous Total Device Dissipation @ TC = 25_C
Derate above 25_C
VEBO VCEX
IC ICM IB PD
5 Vdc 400 Vdc 16 Adc 30 Adc
5 Adc 250 W 1.43 W/_C
Operating and Storage Junction Temperature Range
TJ, Tstg −65 to +200 _C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
THERMAL CHARACTERISTICS Characteristics
Thermal Resistance, Junction−to−Case
Symbol RqJC
Max Unit 0.70 _C/W
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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