www.DataSheet4U.com
MJ15011 (NPN), MJ15012 (PNP)
Preferred Devices
Complementary Silicon Power Transistors
The MJ15011...
www.DataSheet4U.com
MJ15011 (
NPN), MJ15012 (
PNP)
Preferred Devices
Complementary Silicon Power
Transistors
The MJ15011 and MJ15012 are PowerBase power
transistors designed for high−power audio, disk head positioners, and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc−to−dc converters or inverters.
http://onsemi.com
High Safe Operating Area (100% Tested)
1.2 A @ 100 V
Completely Characterized for Linear Operation High DC Current Gain and Low Saturation Voltage
hFE = 20 (Min) @ 2 A, 2 V VCE(sat) = 2.5 V (Max) @ IC = 4 A, IB = 0.4 A For Low Distortion Complementary Designs Pb−Free Packages are Available*
10 AMPERE COMPLEMENTARY POWER
TRANSISTORS 250 VOLTS 200 WATTS
MAXIMUM RATINGS
Rating Collector−Emitter Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous − Peak (Note 1) Base Current − Continuous − Peak (Note 1) Emitter Current − Continuous − Peak (Note 1) Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range Symbol VCEO VCEX VEB IC ICM IB IBM IE IEM PD TJ, Tstg Value 250 250 5 10 15 2 5 12 20 200 1.14 – 65 to + 200 Unit Vdc Vdc Vdc Adc Adc Adc Watts W/_C _C
TO−204AA (TO−3) CASE 1−07 STYLE 1
MARKING DIAGRAM
MJ1501xG AYYWW MEX
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes Symbol RθJC TL Max 0.875 265 Unit _C/W _C
MJ1501x = D...