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M74HCT08 Dataheets PDF



Part Number M74HCT08
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description QUAD 2-INPUT AND GATE
Datasheet M74HCT08 DatasheetM74HCT08 Datasheet (PDF)

M74HCT08 QUAD 2-INPUT AND GATE s HIGH SPEED: tPD = 13ns (TYP.) at VCC=4.5V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C COMPATIBLE WITH TTL OUTPUTS : VIH = 2V (MIN.) VIL = 0.8V (MAX) BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4mA (MIN) PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 08 ORDER CODES PACKAGE DIP SOP TSSOP TUBE M74HCT08B1R M74HCT08M1R T&R M74HCT08RM13TR M74HCT08TTR DIP SOP TSSOP s s s s s DESCRIPTION The M74HCT08 is an high speed CMOS.

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M74HCT08 QUAD 2-INPUT AND GATE s HIGH SPEED: tPD = 13ns (TYP.) at VCC=4.5V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C COMPATIBLE WITH TTL OUTPUTS : VIH = 2V (MIN.) VIL = 0.8V (MAX) BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4mA (MIN) PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 08 ORDER CODES PACKAGE DIP SOP TSSOP TUBE M74HCT08B1R M74HCT08M1R T&R M74HCT08RM13TR M74HCT08TTR DIP SOP TSSOP s s s s s DESCRIPTION The M74HCT08 is an high speed CMOS QUAD 2-INPUT AND GATE fabricated with silicon gate C2MOS technology. The internal circuit is composed of 2 stages including buffer output, which enables high noise immunity and stable output. The M74HCT08 is designed to directly interface HSC2MOS systems with TTL and NMOS components. All inputs are equipped with protection circuits against static discharge and transient excess voltage. PIN CONNECTION AND IEC LOGIC SYMBOLS July 2001 1/8 M74HCT08 INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No 1, 4, 9, 12 2, 5, 10, 13 3, 6, 8, 11 7 14 SYMBOL 1A to 4A 1B to 4B 1Y to 4Y GND VCC NAME AND FUNCTION Data Inputs Data Inputs Data Outputs Ground (0V) Positive Supply Voltage TRUTH TABLE A L L H H B L H L H Y L L L H ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO IIK IOK IO PD Tstg TL Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Current Power Dissipation Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 ± 20 ± 20 ± 25 ± 50 500(*) -65 to +150 300 Unit V V V mA mA mA mA mW °C °C ICC or IGND DC VCC or Ground Current Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C RECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO Top tr, tf Supply Voltage Input Voltage Output Voltage Operating Temperature Input Rise and Fall Time (VCC = 4.5 to 5.5V) Parameter Value 4.5 to 5.5 0 to VCC 0 to VCC -55 to 125 0 to 500 Unit V V V °C ns 2/8 M74HCT08 DC SPECIFICATIONS Test Condition Symbol Parameter VCC (V) 4.5 to 5.5 4.5 to 5.5 4.5 4.5 5.5 5.5 5.5 IO=-20 µA IO=-4.0 mA IO=20 µA IO=4.0 mA VI = VCC or GND VI = VCC or GND Per Input pin VI = 0.5V or VI = 2.4V Other Inputs at VCC or GND IO = 0 TA = 25°C Min. 2.0 Typ. Max. Value -40 to 85°C Min. 2.0 Max. -55 to 125°C Min. 2.0 Max. V Unit VIH High Level Input Voltage Low Level Input Voltage High Level Output Voltage Low Level Output Voltage Input Leakage Current Quiescent Supply Current Additional Worst Case Supply Current VIL 0.8 4.4 4.18 4.5 4.31 0.0 0.17 0.1 0.26 ± 0.1 1 2.0 4.4 4.13 0.8 4.4 4.10 0.1 0.33 ±1 10 2.9 0.8 V VOH VOL II ICC ∆ ICC V 0.1 0.40 ±1 20 3.0 V µA µA mA AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns) Test Condition Symbol Parameter VCC (V) 4.5 4.5 TA = 25°C Min. Typ. 8 13 Max. 15 21 Value -40 to 85°C Min. Max. 19 26 -55 to 125°C Min. Max. 22 32 ns ns Unit tTLH tTHL Output Transition Time tPLH tPHL Propagation Delay Time CAPACITIVE CHARACTERISTICS Test Condition Symbol Parameter VCC (V) TA = 25°C Min. Typ. 5 38 Max. 10 Value -40 to 85°C Min. Max. 10 -55 to 125°C Min. Max. 10 pF pF Unit CIN CPD Input Capacitance Power Dissipation Capacitance (note 1) 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/4 (per gate) 3/8 M74HCT08 TEST CIRCUIT CL = 50pF or equivalent (includes jig and probe capacitance) RT = ZOUT of pulse generator (typically 50Ω) WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle) 4/8 M74HCT08 Plastic DIP-14 MECHANICAL DATA mm. DIM. MIN. a1 B b b1 D E e e3 F I L Z 1.27 3.3 2.54 0.050 8.5 2.54 15.24 7.1 5.1 0.130 0.100 0.51 1.39 0.5 0.25 20 0.335 0.100 0.600 0.280 0.201 1.65 TYP MAX. MIN. 0.020 0.055 0.020 0.010 0.787 0.065 TYP. MAX. inch P001A 5/8 M74HCT08 SO-14 MECHANICAL DATA DIM. A a1 a2 b b1 C c1 D E e e3 F G L M S 3.8 4.6 0.5 8.55 5.8 1.27 7.62 4.0 5.3 1.27 0.68 8° (max.) 0.149 0.181 0.019 8.75 6.2 0.35 0.19 0.5 45° (typ.) 0.336 0.228 0.050 0.300 0.157 0.208 0.050 0.026 0.344 0.244 0.1 mm. MIN. TYP MAX. 1.75 0.2 1.65 0.46 0.25 0.013 0.007 0.019 0.003 MIN. inch TYP. MAX. 0.068 0.007 0.064 0.018 0.010 PO13G 6/8 M74HCT08 TSSOP14 MECHANICAL DATA mm. DIM. MIN. A A1 A2 b c D E E1 e K L 0° 0.45 0.60 0.05 0.8 0.19 0.09 4.9 6.2 4.3 5 6.4 4.4 0.65 BSC 8° 0.75 0° 0.018 0.024 1 TYP MAX. 1.2 0.15 1.05 0.30 0.20 5.1 6.6 4.48 0.002 0.031 0.007 0.004 0.193 0.244 0.169 0.197 0.252 0.173 0.0256 BSC 8° 0.030 0.004 0.039 MIN. TYP. MAX. 0.047 0.006 0.041 0.012 0.0089 0.201 0.260 0.176 inch A A2 A1 b e K c L E D E1 PIN 1 IDENTIFICATION 1 0080337D 7/8 M74HCT08 Information furnished is believed to be accurate and reliable. H.


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