M6MGT160S2BVP

M6MGB/T160S2BVP 16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 2,097,152-BIT (131,072-WORD BY 16-BIT / 262,144-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package) MITSUBISHI LSIs DESCRIPTION FEATURES The MITSUBISHI M6MGB/T160S2BVP is a Stacked Multi Access time Chip Package (S-MCP) that contents 16M-bits flash memory Flash Memory 90ns (Max.) and 2M-bits Static RAM in a 48-pin TSOP (TYPE-I). SRAM 85ns (Max.) Supply voltage Vcc=2.7 ~ 3.6V 16M-bits Flash memory is a 2097152 bytes /1048576 words, Ambient temperature 3.3V-only, and high performance non-volatile memory W version Ta=-20 ~ 85°C fabricated by CMOS technology for the peripheral circuit Package : 48-pin TSOP (Type-I) , 0.4mm lead pitch and DINOR(DIvided bit-line NOR) architecture for the memory cell. 2M-bits SRAM is a 262144 bytes / 131072 words APPLICATION unsynchronous SRAM fabricated by silicon-gate CMOS technology. Mobile communication products M6MGB/T160S2BVP is suitable for the application of the mobile-communication-system to reduce both the mount space and weight . PIN CONFIGURATION (TOP VIEW) A15 A14 A13 A12 A11 A10 A9 A8 A19 S-CE WE# F-RP# F-WP# S-VCC F-RY/BY# A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 BYTE# GND DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 F-VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# GND F-CE# A0 10.0 mm 14...