32 Mbit 2Mb x16 / Boot Block Flash Memory and 4 Mbit 256Kb x16 SRAM / Multiple Memory Product
M36W432TG M36W432BG
32 Mbit (2Mb x16, Boot Block) Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product
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Description
M36W432TG M36W432BG
32 Mbit (2Mb x16, Boot Block) Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product
PRELIMINARY DATA
FEATURES SUMMARY s MULTIPLE MEMORY PRODUCT – 32 Mbit (2Mb x 16), Boot Block, Flash Memory – 4 Mbit (256Kb x 16) SRAM Memory s SUPPLY VOLTAGE – VDDF = 2.7V to 3.3V – VDDS = VDDQF = 2.7V to 3.3V – VPPF = 12V for Fast Program (optional)
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SRAM s 4 Mbit (256Kb x 16)
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ACCESS TIME: 70ns LOW VDDS DATA RETENTION: 1.5V POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS
ACCESS TIME: 70ns, 85ns LOW POWER CONSUMPTION ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code, M36W432TG: 88BAh – Bottom Device Code, M36W432BG: 88BBh
Figure 1. Package
FBGA
FLASH MEMORY s MEMORY BLOCKS – Parameter Blocks (Top or Bottom Location) – Main Blocks
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Stacked LFBGA66 (ZA) 12 x 8 mm
PROGRAMMING TIME – 10µs typical – Double Word Programming Option – Quadruple Word Programming Option
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BLOCK LOCKING – All blocks locked at Power up – Any combination of blocks can be locked – WPF for Block Lock-Down
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AUTOMATIC STANDBY MODE PROGRAM and ERASE SUSPEND 100,000 PROGRAM/ERASE CYCLES per BLOCK COMMON FLASH INTERFACE SECURITY – 128 bit user programmable OTP cells – 64 bit unique device identifier
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November 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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M36W432TG, M36W432BG
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