M29W800D

M29W800DT M29W800DB 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages ACCESS TIME: 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical 19 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 16 Main Blocks SO44 (M) s s PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithms ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend TSOP48 (N) 12 x 20mm s s UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming TEMPORARY BLOCK UNPROTECTION MODE COMMON FLASH INTERFACE – 64 bit Security Code s FBGA s TFBGA48 (ZA) 8 x 6 ball array s LOW POWER CONSUMPTION – Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Top Device Code M29W800DT: 22D7h – Bottom Device Code M29W800DB: 225Bh s s April 2002 1/41 M29W800DT, M29W800DB TABLE OF CONTENTS SUMMARY DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 3. SO Connections . . . . . . . . . . . . . . . . . ...