Silicon planer type
Zener Diodes Composite Elements
MA111
MAZE062D
Silicon planer type
Constant voltage, constant current, waveform crippe...
Description
Zener Diodes Composite Elements
MA111
MAZE062D
Silicon planer type
Constant voltage, constant current, waveform cripper and surge absorption circuit s Features
q S-Mini q Low q Two Unit : mm
2.1±0.1 0.425 1.25±0.1 0.425
2.0±0.2 1.3±0.1 0.65 0.65
1 3 2
type package (3-pin)
joint capacity zener diode (VZ= 6.2V) anode-common element wiring
0.9±0.1
s Absolute Maximum Ratings (Ta= 25˚C)
Parameter Instanious forward current Total power dissipation Junction temperature Storage temperature
* With a printed-circuit board 2
Symbol IFRM Ptot* Tj Tstg
Rating 200 150 150 – 55 to + 150
Unit mA mW ˚C ˚C
1
1 : Cathode 1 2 : Cathode 2 3 : Anode 1 Anode 2 Flat S-Mini Type Package (3-pin)
s Internal Connection
3
1 s Electrical Characteristics (Ta= 25˚C)* Parameter Forward voltage Zener voltage Operating resistance Reverse current Terminal capacitance Symbol VF VZ*2 RZK RZ IR Ct IF=10mA IZ= 5mA IZ= 0.5mA IZ= 5mA VR= 5.5V VR= 0V, f=1MHz 8 5.9 Condition min typ 0.9 max 1.0 6.5 100 30 3 Unit V V Ω Ω µA pF
Note 1. Rated input/output frequency : 5MHz 2. Test method : Depend on JIS C7031 testing 3. Electrostatic discharge is ±15kV Test method : IEC-801(C=150pF, R=330Ω, Contact discharge : 10 times) Test unit : ESS-200AX 4. * 1 : The VZ value is for the temperature of 25˚C. In other cases, carry out the temperature compensation. * 2 : Guaranteeed at 20ms after power application
s Marking
6.2C
0.15–0.05
+0.1
0.3–0
+0.1
...
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