Document
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MCR703A/D
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
. . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • • • • • Small Size Passivated Die Surface for Reliability and Uniformity Low Level Triggering and Holding Characteristics Recommend Electrical Replacement for C106 Available in Two Package Styles: Surface Mount Leadforms — Case 369A Miniature Plastic Package — Straight Leads — Case 369
A
MCR703A thru MCR708A*
*Motorola preferred devices
SCRs 4.0 AMPERES RMS 100 thru 600 VOLTS
ORDERING INFORMATION • To Obtain “DPAK” in Surface Mount Leadform (Case 369A): Shipped in Sleeves — No Suffix, i.e., MCR706A Shipped in 16 mm Tape and Reel — Add “RL” Suffix to Device Number, i.e., MCR706ARL • To Obtain “DPAK” in Straight Lead Version: Shipped in Sleeves — Add ‘1’ Suffix to Device Number, i.e., MCR706A1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Characteristic Peak Repetitive Forward and Reverse Blocking Voltage (1) (1/2 Sine Wave) (RGK = 1000 Ohms, MCR703A1, MCR703A TC = –40 to +110°C) MCR704A1, MCR704A MCR706A1, MCR706A MCR708A1, MCR708A Peak Non-repetitive Reverse Blocking Voltage (1/2 Sine Wave, RGK = 1000 Ohms, TC = –40 to +110°C) MCR703A1, MCR703A MCR704A1, MCR704A MCR706A1, MCR706A MCR708A1, MCR708A Average On-State Current (TC = –40 to +90°C) (TC = +100°C) Symbol VDRM or VRRM 100 200 400 600 VRSM 150 250 450 650 IT(AV) ITSM 2.6 1.6 25 35 Amps Amps Volts Value Unit
G
K
A G Volts A K CASE 369A STYLE 5 A
G
A K CASE 369 STYLE 5
Surge On-State Current (1/2 Sine Wave, 60 Hz, TC = +90°C) (1/2 Sine Wave, 1.5 ms TC = +90°C) Circuit Fusing (t = 8.3 ms) Peak Gate Power (Pulse Width = 10 µs, TC = 90°C) Average Gate Power (t = 8.3 ms, TC = 90°C) Peak Forward Gate Current Peak Reverse Gate Voltage Operating Junction Temperature Range Storage Temperature Range
0.190 4.826
0.165 4.191
I2t PGM PG(AV) IGM VRGM TJ Tstg
2.6 0.5 0.1 0.2 6 –40 to +110 –40 to +150
A2s Watt Watt
0.100 2.54
Amp Volts °C °C 0.063 1.6
0.118 3.0
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
0.243 6.172
ǒinchesǓ mm
Figure 1. Minimum Pad Sizes for Surface Mounting 1
REV 1
Motorola Thyristor Device Data © Motorola, Inc. 1995
MCR703A thru MCR708A
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Case 369A-04)(1) Thermal Resistance, Junction to Ambient (Case 369-03)(2) Symbol RθJC RθJA RθJA Min — — — Max 8.33 80 85 Unit °C/W °C/W °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C and RGK = 1000 ohms unless otherwise noted.)
Characteristic Peak Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM) TC = 25°C TC = 110°C Peak Forward “On” Voltage (ITM = 8.2 A Peak, Pulse Width = 1 to 2 ms, 2% Duty Cycle) Gate Trigger Current (Continuous dc)(3) (VAK = 12 Vdc, RL = 24 Ohms) (VAK = 12 Vdc, RL = 24 Ohms, TC = –40°C) Gate Trigger Voltage (Continuous dc) (Source Voltage = 12 V, RS = 50 Ohms) (VAK = 12 Vdc, RL = 24 Ohms, TC = –40°C) Gate Non-Trigger Voltage (VAK = Rated VDRM, RL = 100 Ohms, TC = 110°C) Holding Current (VAK = 12 Vdc, IGT = 2 mA) TC = 25°C (Initiating On-State Current = 200 mA) TC = –40°C Total Turn-On Time (Source Voltage = 12 V, RS = 6 k Ohms) (ITM = 8.2 A, IGT = 2 mA, Rated VDRM) (Rise Time = 20 ns, Pulse Width = 10 µs) Forward Voltage Application Rate (VD = Rated VDRM, Exponential Waveform, TC = 110°C) 1. Case 369A-04 when surface mounted on minimum pad sizes recommended. 2. Case 369-03 standing in free air. 3. RGK current not included in measurement. Symbol IDRM, IRRM — — VTM IGT — — VGT — 25 — — 75 300 1 Volts — — — 10 200 2.2 Volts µA Min Typ Max Unit µA
VGD IH
0.2
—
—
Volts mA
— — tgt —
— — 2
5 10 — µs
dv/dt
—
10
—
V/µs
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C)
110 106 102 98 94 90 α = 30° 86 82 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 IT(AV), AVERAGE FORWARD CURRENT (AMP) 3.6 4 60° 90° 120° 180° dc 0 π
110 TA , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( °C)
90 0 70 α f = 60 Hz π
α f = 60 Hz
50 α = 30° 0 0.1 60° 90° 180°
30
dc 0.8
0.2 0.3 0.4 0.5 0.6 0.7 IT(AV), AVERAGE FORWARD CURRENT (AMP)
Figure 2. Maximum Case Temperature
Figure 3. Maximum Ambient Temperature
2
Motorola Thyristor Device Data
MCR703A thru MCR708A
PACKAGE DIMENSIONS
B V R
4
C E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K R S V INCHES MIN MAX 0.235 0.250 .