MCR265-2

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCR265-2/D Thyristors Silicon Controlled Rectifiers . . . designed for inverse parallel SCR output devices for solid state relays, welders, battery chargers, motor controls or applications requiring high surge operation. Photo Glass Passivated Blocking Junctions for High Temperature Stability, Center Gate for Uniform Parameters 550 Amperes Surge Capability Blocking Voltage to 800 Volts MCR265-2 thru MCR265-10 SCRs 55 AMPERES RMS 50 thru 800 VOLTS G A K CASE 221A-04 (TO-220AB) STYLE 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Peak Repetitive Forward and Reverse Blocking Voltage(1) (TJ = 25 to 125°C, Gate Open) MCR265-2 MCR265-4 MCR265-6 MCR265-8 MCR265-10 Forward Current (TC = 70°C) (All Conduction Angles) Peak Non-repetitive Surge Current — 8.3 ms (1/2 Cycle, Sine Wave) Forward Peak Gate Power Forward Average Gate Power Forward Peak Gate Current (300 µs, 120 PPS) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM VRRM 50 200 400 600 800 IT(RMS) IT(AV) ITSM PGM PG(AV) IGM TJ Tstg 55 35 550 20 0.5 2 –40 to +125 –40 to +150 Amps Amps Watts Watt Amps °C °C Value Unit Volts 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that ...