MCR264-9

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCR264-4/D Thyristors MCR264Ć4 thru MCR264Ć10 SCRs 40 AMPERES RMS 200 thru 800 VOLTS Silicon Controlled Rectifiers . . . designed for back-to-back SCR output devices for solid state relays or applications requiring high surge operation. Photo Glass Passivated Blocking Junctions for High Temperature Stability, Center Gate for Uniform Parameters 400 Amperes Surge Capability Blocking Voltage to 800 Volts G A K CASE 221A-04 (TO-220AB) STYLE 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Peak Repetitive Forward and Reverse Blocking Voltage(1) (TJ = 25 to 125°C, Gate Open) MCR264-4 MCR264-6 MCR264-8 MCR264-10 Forward Current (TC = 80°C) (All Conduction Angles) Peak Non-repetitive Surge Current – 8.3 ms (1/2 Cycle, Sine Wave) 1.5 ms Forward Peak Gate Power Forward Average Gate Power Forward Peak Gate Current (300 µs, 120 PPS) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM VRRM 200 400 600 800 IT(RMS) IT(AV) ITSM PGM PG(AV) IGM TJ Tstg 40 25 400 450 20 0.5 2 –40 to +125 –40 to +150 Amps Amps Watts Watt Amps °C °C Value Unit Volts 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded...