MCR218

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCR218/D Thyristors Silicon-Controlled Rectifiers . . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. Glass-Passivated Junctions Blocking Voltage to 800 Volts TO-220 Construction — Low Thermal Resistance, High Heat Dissipation and Durability MCR218 Series SCRs 8 AMPERES RMS 50 thru 800 VOLTS G A K CASE 221A-04 (TO-220AB) STYLE 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Peak Repetitive Forward and Reverse Voltage(1) (TJ = 25 to 125°C, Gate Open) MCR218-2 MCR218-3 MCR218-4 MCR218-6 MCR218-8 MCR218-10 Forward Current RMS (All Conduction Angles) Peak Forward Surge Current (1/2 Cycle, Sine Wave, 60 Hz) Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Power Forward Average Gate Power Forward Peak Gate Current Operating Junction Temperature Range Storage Temperature Range Symbol VDRM VRRM Value 50 100 200 400 600 800 8 80 26 5 0.5 2 –40 to +125 –40 to +150 Amps Amps A2s Watts Watt Amps °C °C Unit Volts IT(RMS) ITSM I2t PGM PG(AV) IGM TJ Tstg 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such...