Silicon Controlled Rectifiers
MCR12D, MCR12M, MCR12N
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily f...
Description
MCR12D, MCR12M, MCR12N
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half–wave silicon gate–controlled devices are needed. Blocking Voltage to 800 Volts On–State Current Rating of 12 Amperes RMS at 80°C High Surge Current Capability — 100 Amperes Rugged, Economical TO220AB Package Glass Passivated Junctions for Reliability and Uniformity Minimum and Maximum Values of IGT, VGT an IH Specified for Ease of Design High Immunity to dv/dt — 100 V/µsec Minimum at 125°C Device Marking: Logo, Device Type, e.g., MCR12D, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Peak Repetitive Off–State Voltage(1) (TJ = –40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR12D MCR12M MCR12N On-State RMS Current (180° Conduction Angles; TC = 80°C) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.33 ms) Forward Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) Forward Average Gate Power (t = 8.3 ms, TC = 80°C) Forward Peak Gate Current (Pulse Width ≤ 1.0 µs, TC = 80°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 400 600 800 IT(RMS) ITSM 12 100 A A TO–220AB CASE 221A STYLE 3 Value Unit Volts
http://onsemi.com
SCRs 12 AMPERES RMS 400 thru 800 VOLTS
G A K
4
1
2
3
I2t PGM PG(AV) IGM TJ Tstg
41 5.0 0.5 2....
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