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MCM6708A Dataheets PDF



Part Number MCM6708A
Manufacturers Motorola
Logo Motorola
Description 64K x 4 Bit Static RAM
Datasheet MCM6708A DatasheetMCM6708A Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCM6708A/D 64K x 4 Bit Static RAM The MCM6708A is a 262,144 bit static random access memory organized as 65,536 words of 4 bits, fabricated using high–performance silicon–gate BiCMOS technology. Static design eliminates the need for external clocks or timing strobes. The MCM6708A is available in a 300 mil, 24 lead plastic surface–mount SOJ package. • • • • • Single 5 V ± 10% Power Supply Fully Static — No Clock or Timing Strobes Nec.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCM6708A/D 64K x 4 Bit Static RAM The MCM6708A is a 262,144 bit static random access memory organized as 65,536 words of 4 bits, fabricated using high–performance silicon–gate BiCMOS technology. Static design eliminates the need for external clocks or timing strobes. The MCM6708A is available in a 300 mil, 24 lead plastic surface–mount SOJ package. • • • • • Single 5 V ± 10% Power Supply Fully Static — No Clock or Timing Strobes Necessary All Inputs and Outputs are TTL Compatible Three State Outputs Fast Access Times: MCM6708A–8 = 8 ns MCM6708A–10 = 10 ns MCM6708A–12 = 12 ns MCM6708A J PACKAGE 300 MIL SOJ CASE 810A–02 PIN ASSIGNMENT 1 2 3 4 5 6 7 8 9 10 11 12 VCC A15 A14 A13 A12 A11 A10 DQ0 DQ1 DQ2 DQ3 W A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 E VSS 24 23 22 21 20 19 18 17 16 15 14 13 BLOCK DIAGRAM A A A A A A A A ROW DECODER MEMORY MATRIX 256 ROWS x 256 x 4 COLUMNS DQ0 • • • DQ3 A A A • • • INPUT DATA CONTROL COLUMN I/O COLUMN DECODER • • • PIN NAMES A0 – A15 . . . . . . . . . . . Address Inputs W . . . . . . . . . . . . . . . . . . . Write Enable E . . . . . . . . . . . . . . . . . . . . . Chip Enable DQ0 – DQ3 . . . . . . . Data Input/Output VCC . . . . . . . . . . . + 5 V Power Supply VSS . . . . . . . . . . . . . . . . . . . . . . Ground NC . . . . . . . . . . . . . . . . No Connection A A A A A E W REV 5 5/95 © Motorola, Inc. 1995 MOTOROLA FAST SRAM MCM6708A 2–1 TRUTH TABLE (X = Don’t Care) E H L L L G X H L X W X H H L Mode Not Selected Read Read Write Output High–Z High–Z Dout Din Cycle — — Read Cycle Write Cycle ABSOLUTE MAXIMUM RATINGS (See Note) Rating Power Supply Voltage Voltage Relative to VSS for Any Pin Except VCC Output Current (per I/O) Power Dissipation Temperature Under Bias Operating Temperature Storage Temperature — Plastic Symbol VCC Vin, Vout Iout PD Tbias TA Value – 0.5 to + 7.0 – 0.5 to VCC + 0.5 ± 30 2.0 – 10 to + 85 0 to + 70 Unit V V mA W °C °C This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than maximum rated voltages to this high–impedance circuit. This BiCMOS memory circuit has been designed to meet the dc and ac specifications shown in the tables, after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse air flow of at least 500 linear feet per minute is maintained. Tstg – 55 to + 125 °C NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to RECOMMENDED OPERATING CONDITIONS. Exposure to higher than recommended voltages for extended periods of time could affect device reliability. DC OPERATING CONDITIONS AND CHARACTERISTICS (VCC = 5.0 V ± 10%, TA = 0 to 70°C, Unless Otherwise Noted) RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage (Operating Voltage Range) Input High Voltage Input Low Voltage Symbol VCC VIH Min 4.5 2.2 Typ 5.0 — — Max 5.5 VCC + 0.3* 0.8 Unit V V V VIL – 0.5** * VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2.0 V ac (pulse width ≤ 2.0 ns) or I ≤ 30.0 mA. ** VIL (min) = – 0.5 V dc @ 30.0 mA; VIL (min) = – 2.0 V ac (pulse width ≤ 2.0 ns) or I ≤ 30.0 mA. DC CHARACTERISTICS Parameter Input Leakage Current (All Inputs, Vin = 0 to VCC) Output Leakage Current (E = VIH, Vout = 0 to VCC) Output High Voltage (IOH = – 4.0 mA) Output Low Voltage (IOL = 8.0 mA) Symbol Ilkg(I) Ilkg(O) VOH VOL Min — — 2.4 — Max ± 1.0 ± 1.0 — 0.4 Unit µA µA V V POWER SUPPLY CURRENTS Parameter AC Active Supply Current (Iout = 0 mA, VCC = max, f = fmax) AC Standby Current (E = VIH, VCC = max, f = fmax) CMOS Standby Current (VCC = max, f = 0 MHz, E ≥ VCC – 0.2 V, Vin ≤ VSS, or ≥ VCC – 0.2 V) Symbol ICCA ISB1 ISB2 MCM6708A–8 185 120 50 MCM6708A–10 175 110 50 MCM6708A–12 165 105 50 Unit mA mA mA Notes 1, 2, 3 1, 2, 3 NOTES: 1. Reference AC Operating Conditions and Characteristics for input and timing (VIH/VIL, tr/tf, pulse level 0 to 3.0 V, VIH = 3.0 V). 2. All addresses transition simultaneously low (LSB) and then high (MSB). 3. Data states are all zero. MCM6708A 2–2 MOTOROLA FAST SRAM CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, TA = 25°C, Periodically Sampled Rather Than 100% Tested) Parameter Address Input Capacitance Control Pin Input Capacitance (E, G, W) Input/Output Capacitance Symbol Cin Cin CI/O Max 5 5 6 Unit pF pF pF AC OPERATING CONDITIONS AND CHARACTERISTICS (VCC = 5.0 V ± 10%, TA = 0 to + 70°C, Unless Otherwise Noted) Input Timing Measurement Reference Level . . . . . . . . . . . . . . . 1.5 V Input Pulse Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to 3.0 V Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 ns Output Timing Measurement Reference Level . . . . . . . . . . . . . 1.5 V Output Load . . . . . . . . . . ..


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