Ultrahigh-Speed Switching Applications
Ordering number:ENN6369
P-Channel Silicon MOSFET
MCH3302
Ultrahigh-Speed Switching Applications
Features
· Low ON resi...
Description
Ordering number:ENN6369
P-Channel Silicon MOSFET
MCH3302
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed swithcing. · 4V drive.
Package Dimensions
unit:mm 2167
[MCH3302]
0.25
0.3 3
0.15
1.6
1 0.65 2.0
2
0.25 0.85
2.1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2×0.8mm) Conditions
1 : Gate 2 : Source 3 : Drain SANYO : MCPH3
0.15
Ratings –30 ±20 –1 –4 1 150 –55 to +150
Unit V V A A W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=–1mA, VGS=0 VDS=–30V, VGS=0 VGS=±16V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–500mA ID=–500mA, VGS=–10V ID=–300mA, VGS=–4V VDS=–10V, f=1MHz VDS=–10V, f=1MHz VDS=–10V, f=1MHz –1.0 670 950 350 680 90 50 20 460 950 Conditions Ratings min –30 –10 ±10 –2.5 typ max Unit V µA µA V mS mΩ mΩ pF pF pF
Marking : JB
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