power GaAs FET
< X/Ku band internally matched power GaAs FET >
MGFK30V4045
14.0 – 14.5 GHz BAND / 1.1W
DESCRIPTION
The MGFK30V4045 is a...
Description
< X/Ku band internally matched power GaAs FET >
MGFK30V4045
14.0 – 14.5 GHz BAND / 1.1W
DESCRIPTION
The MGFK30V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Internally matched to 50(ohm) system Flip-chip mounted High output power
P1dB=1.1W (TYP.) @f=14.0 – 14.5GHz High linear power gain
GLP=8.0dB (TYP.) @f=14.0 – 14.5GHz High power added efficiency
P.A.E.=24% (TYP.) @f=14.0 – 14.5GHz
APPLICATION
14.0 – 14.5 GHz band power amplifiers
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS=8V ID=350mA Refer to Bias Procedure
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
VGDO Gate to drain breakdown voltage
-15
VGSO Gate to source breakdown voltage
-15
ID Drain current
1000
IGR Reverse gate current
-3
IGF Forward gate current
5
PT *1 Total power dissipation
11
Tch Cann...
Similar Datasheet