MGFC5216 Datasheet PDF

PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICON...

PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5216 Q-Band 4-Stage Driver Amplifier DESCRIPTION The MGFC5216 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band Middle Power Amplifier (MPA) . BLOCK DIAGRAM Vg1 Vg2 Vg3 Vg4 OUT FEATURES RF frequency : 37.0 to 43.0 GHz Linear gain : 20dB (TYP.)@ 37 to 40 GHz 20 dB(TYP.) @ 40 to 43 GHz P1dB : ≥ 16 dBm(min.) @ 37 to 40 GHz ≥ 16 dBm(target) @ 40 to 43 GHz IN Vd1 Vd2 Vd3 Vd4 TARGET SPECIFICATIONS (Ta=25˚C) Parameter Frequeny Linear Gain P1dB Input VSWR Output VSWR Vd Vg Chip Size Specification Frequeny Linear Gain P1dB Input VSWR Output VSWR Vd Vg Chip Size (16) 2.4 3.0 Vd12=4.5, Vd34=6 -0.3 1.99x0.83 V V mm2 16 2.2 2.0 Vd12=4.5, Vd34=6 -0.3 1.99x0.83 Typical V V mm2 Max. 43 20 Unit GHz dB dBm Min. 37 20 Typical Max. 40 Unit GHz dB dBm PHOTOGRAPH Min. 40 ( ):Design Target (Now Evaluating) MITSUBISHI ELECTRIC as of July '98 PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5216 Q-Band 4-Stage Driver Amplifier DIE SIZE AND BOND PAD LOCATION(UNIT : µM) X=1.99 mm Y=0.83 mm Bond Pad Dimension=0.07 x 0.15 mm2 (RF) 0.1 x 0.1 mm2 (DC) (630.0, 700.0) (1395.0, 700.0) (270.0, 700.0) (990.0, 700.0) (115.0, 445.0) RFin RFout (1875.0, 445.0) (1695.0, 130.0) (965.0, 130.0) (165.0, 125.5) (515.0, 130.0) (1350.0, 130.0) Vg...