Document
PRELIMINARY
Notice : This is not a final specification Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR
MGFC5107
Ka-Band 3-Stage Self Bias Low Noise Amplifier
DESCRIPTION
The MGFC5107 is a GaAs MMIC chip especially designed for 21.0 ~ 24.0 GHz band Low Noise Amplifier.(LNA) .
BLOCK DIAGRAM
Vd1 Vd2 Vd3
FEATURES
RF frequency : 21.0 to 24.0 GHz Super Low Noise NF=2.5dB (TYP.) Single voltage operation
In Vg1 Vg2 Vg3
Out
PHOTOGRAPH
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
Symbol Vd Id Vg Pin Ta Drain bias voltage Drain bias current Gate bias voltage Maximum peak input power overdrive (Duration < 1sec) Operating temperature range Parameter Values 5 30 Unit V mA V dBm ˚C
TBD TBD Limits
TARGET SPECIFICATIONS (Ta=25˚C)
Symbol Fop Gain Delta gain NF VSWR in VSWR out P1dB Output IP3 Vd Id Vg Parameter Operating frequency range Small signal gain Small signal gain flatness Noise figure Input VSWR Output VSWR Output power at 1 dB compression Output power at 3rdorder intercept point Drain bias voltage Drain bias current Gate bias voltage Freq=22GHz Vd=5V,Id=30mA (5) TBD (17) TBD 5 30 No need On-wafer measurement 21.0 17.0 18.0 1.5 2.5 3.5 2.0:1 2.0:1 dBm dBm V mA V as of July '98 24.0 Test conditions Min. Typ. Max. Unit GHz dB dB dB
MITSUBISHI ELECTRIC
PRELIMINARY
Notice : This is not a final specification Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR
MGFC5107
Ka-Band 3-Stage Self Bias Low Noise Amplifier
DIE SIZE AND BOND PAD LOCATION(UNIT : µm)
2194 1700 1400 900 400 150 150 150 150
Vd1a Vd1b
Vd2a Vd2b
Vd3aVd3b
GND GND
GND RF-in GND Vg1 Vg2 Vg3
GND RF-out GND
106 480 775 1430 2300
MITSUBISHI ELECTRIC
as of July '98
PRELIMINARY
Notice : This is not a final specification Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR
MGFC5107
Ka-Band 3-Stage Self Bias Low Noise Amplifier
TYPICAL CHARACTERISTICS
Small Signal Performances
(Vd = 5.0 V, Id = 30 mA, Ta = 25 ˚C )
25
NF
10
20
8
15
6
10
VSWR out
4
5
2
VSWR in
0 18 19 20 21 22 23 24 25 0
Frequency (GHz)
MITSUBISHI ELECTRIC
as of July '98
PRELIMINARY
Notice : This is not a final specification Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR
MGFC5107
Ka-Band 3-Stage Self Bias Low Noise Amplifier
AN EXAMPLE OF TEST CIRCUIT
5V
5V
5V
Cb
Cb
Cb
:Chip capacitor (39pF) Cb > 100µF
Vd1a Vd1b
Vd2a Vd2b
Vd3a Vd3b
GND
GND
GND RF-in GND Vg1 Vg2 Vg3
GND RF-out GND
*1 *2 *1 Length of bonding wire < 200 µm *2 Number of bonding wire ≥ 3
*1 *2
MITSUBISHI ELECTRIC
as of July '98
PRELIMINARY
Notice : This is not a final specification Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR
MGFC5107
Ka-Band 3-Stage Self Bias Low Noise Amplifier
AN EXAMPLE OF TEST CIRCUIT
2.5V
2.5V
2.5V
Cb
Cb
Cb
:Chip capacitor (39pF) Cb > 100µF
Vd1a Vd1b
Vd2a Vd2b
Vd3a Vd3b
GND
GND
GND RF-in GND Vg1 Vg2 Vg3
GND RF-out GND
*1 *2 *1 Length of bonding wire < 200 µm *2 Number of bonding wire ≥ 3
*1 *2
MITSUBISHI ELECTRIC
as of July '98
.